Publication:

Impact of millisecond laser anneal on the thermal stress-induced defect creation in Si1-xGex source/drain junctions

Date

2008
Proceedings Paper
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dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorSimoen, Eddy
dc.contributor.authorRosseel, Erik
dc.contributor.authorVerheyen, Peter
dc.contributor.authorSouriau, Laurent
dc.contributor.authorGeypen, Jef
dc.contributor.authorBender, Hugo
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorLoo, Roger
dc.contributor.authorAbsil, Philippe
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorGeypen, Jef
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-17T06:15:22Z
dc.date.available2021-10-17T06:15:22Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13344
dc.source.beginpage23
dc.source.conferenceAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment
dc.source.conferencedate18/05/2008
dc.source.conferencelocationPhoenix, AZ USA
dc.source.endpage30
dc.title

Impact of millisecond laser anneal on the thermal stress-induced defect creation in Si1-xGex source/drain junctions

dc.typeProceedings paper
dspace.entity.typePublication
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