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Theoretical and experimental study of the front and back interface trap density in accumulation mode SOI MOSFETs at low temperatures

Date

1995
Proceedings Paper
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dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-09-29T13:10:50Z
dc.date.available2021-09-29T13:10:50Z
dc.date.embargo9999-12-31
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/757
dc.source.beginpage271
dc.source.conferenceProceedings of the Symposium on Low Temperature Electronics and High Temperature Superconductivity
dc.source.conferencedate21/05/1995
dc.source.conferencelocationReno, NV USA
dc.source.endpage277
dc.title

Theoretical and experimental study of the front and back interface trap density in accumulation mode SOI MOSFETs at low temperatures

dc.typeProceedings paper
dspace.entity.typePublication
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