Origin of the substrate current after soft-breakdown in thin oxide n-MOSFETs

dc.contributor.author	Crupi, Felice
dc.contributor.author	Iannaccone, G.
dc.contributor.author	Neri, B.
dc.contributor.author	Crupi, Isodiana
dc.contributor.author	Degraeve, Robin
dc.contributor.author	Groeseneken, Guido
dc.contributor.author	Maes, Herman
dc.contributor.imecauthor	Degraeve, Robin
dc.contributor.imecauthor	Groeseneken, Guido
dc.date.accessioned	2021-10-06T10:51:12Z
dc.date.available	2021-10-06T10:51:12Z
dc.date.issued	1999
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/3324
dc.source.beginpage	77
dc.source.conference	IFPA '99 - Proceedings of the 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits;
dc.source.endpage	80
dc.title	Origin of the substrate current after soft-breakdown in thin oxide n-MOSFETs
dc.type	Proceedings paper
dspace.entity.type	Publication
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