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Electron trapping in ferroelectric HfZrO4 and Al- and Si-doped layers

 
dc.contributor.authorIzmailov, R. A.
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorPopovici, Mihaela Ioana
dc.contributor.authorAfanas'ev, V. V.
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorPopovici, Mihaela Ioana
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecPopovici, Mihaela Ioana::0000-0002-9838-1088
dc.date.accessioned2021-12-15T11:00:49Z
dc.date.available2021-11-02T15:59:56Z
dc.date.available2021-12-15T11:00:49Z
dc.date.issued2021
dc.identifier.doi10.1016/j.sse.2021.108066
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37793
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.source.beginpage108066
dc.source.issuena
dc.source.journalSOLID-STATE ELECTRONICS
dc.source.numberofpages3
dc.source.volume183
dc.title

Electron trapping in ferroelectric HfZrO4 and Al- and Si-doped layers

dc.typeJournal article
dspace.entity.typePublication
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