A new analytic model for the description of the intrinsic oxide breakdown statistics of ultra-thin oxides

dc.contributor.author	Degraeve, Robin
dc.contributor.author	Roussel, Philippe
dc.contributor.author	Groeseneken, Guido
dc.contributor.author	Maes, Herman
dc.contributor.imecauthor	Degraeve, Robin
dc.contributor.imecauthor	Roussel, Philippe
dc.contributor.imecauthor	Groeseneken, Guido
dc.date.accessioned	2021-09-29T14:25:27Z
dc.date.available	2021-09-29T14:25:27Z
dc.date.issued	1996
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/1189
dc.source.beginpage	1639
dc.source.endpage	1642
dc.source.journal	Microelectronics and Reliability
dc.source.volume	36
dc.title	A new analytic model for the description of the intrinsic oxide breakdown statistics of ultra-thin oxides
dc.type	Journal article
dspace.entity.type	Publication
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