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Gate-all-around nanowire FETs vs. triple-gate FinFETs: on gate integrity and device characteristics
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Gate-all-around nanowire FETs vs. triple-gate FinFETs: on gate integrity and device characteristics
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Date
2016
Proceedings Paper
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33706.pdf
681.54 KB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Veloso, Anabela
;
Cho, Moon Ju
;
Simoen, Eddy
;
Hellings, Geert
;
Matagne, Philippe
;
Collaert, Nadine
;
Thean, Aaron
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1924
since deposited on 2021-10-23
Acq. date: 2025-12-16
Citations
Metrics
Views
1924
since deposited on 2021-10-23
Acq. date: 2025-12-16
Citations