Publication:

Leakage mechanism in ion implantation isolated AlGaN/GaN heterostructures

Date

2022-12-28
Journal article
https://doi.org/10.1063/5.0076243
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dc.contributor.authorYu, Hao
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorPeralagu, Uthayasankaran
dc.contributor.authorZhao, Ming
dc.contributor.authorYadav, Sachin
dc.contributor.authorAlian, Alireza
dc.contributor.authorParvais, Bertrand
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorYu, Hao
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorPeralagu, Uthayasankaran
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorYadav, Sachin
dc.contributor.imecauthorAlian, Alireza
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecYu, Hao::0000-0002-1976-0259
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecPeralagu, Uthayasankaran::0000-0001-9166-4408
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecYadav, Sachin::0000-0003-4530-2603
dc.contributor.orcidimecAlian, AliReza::0000-0003-3463-416X
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2022-08-31T08:04:29Z
dc.date.available2022-08-22T02:33:17Z
dc.date.available2022-08-24T05:29:54Z
dc.date.available2022-08-31T08:04:29Z
dc.date.embargo2022-01-22
dc.date.issued2022-12-28
dc.identifier.doi10.1063/5.0076243
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40287
dc.publisherAIP Publishing
dc.source.beginpage035701
dc.source.issue3
dc.source.journalJOURNAL OF APPLIED PHYSICS
dc.source.numberofpages9
dc.source.volume131
dc.subject.disciplineElectrical & electronic engineering
dc.subject.keywordsGAN
dc.subject.keywordsALN
dc.title

Leakage mechanism in ion implantation isolated AlGaN/GaN heterostructures

dc.typeJournal article
dspace.entity.typePublication
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