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Role of hydrogen on negative bias temperature instability in HfO2-based hole channel field-effect transistors
Publication:
Role of hydrogen on negative bias temperature instability in HfO2-based hole channel field-effect transistors
Date
2004
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Houssa, Michel
;
De Gendt, Stefan
;
Autran, J.L.
;
Groeseneken, Guido
;
Heyns, Marc
Journal
Applied Physics Letters
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1866
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations
Metrics
Views
1866
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations