Publication:
Role of hydrogen on negative bias temperature instability in HfO2-based hole channel field-effect transistors
Date
| dc.contributor.author | Houssa, Michel | |
| dc.contributor.author | De Gendt, Stefan | |
| dc.contributor.author | Autran, J.L. | |
| dc.contributor.author | Groeseneken, Guido | |
| dc.contributor.author | Heyns, Marc | |
| dc.contributor.imecauthor | Houssa, Michel | |
| dc.contributor.imecauthor | De Gendt, Stefan | |
| dc.contributor.imecauthor | Groeseneken, Guido | |
| dc.contributor.imecauthor | Heyns, Marc | |
| dc.contributor.orcidimec | Houssa, Michel::0000-0003-1844-3515 | |
| dc.contributor.orcidimec | De Gendt, Stefan::0000-0003-3775-3578 | |
| dc.date.accessioned | 2021-10-15T13:56:20Z | |
| dc.date.available | 2021-10-15T13:56:20Z | |
| dc.date.issued | 2004 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/9062 | |
| dc.source.beginpage | 2101 | |
| dc.source.endpage | 2103 | |
| dc.source.issue | 11 | |
| dc.source.journal | Applied Physics Letters | |
| dc.source.volume | 85 | |
| dc.title | Role of hydrogen on negative bias temperature instability in HfO2-based hole channel field-effect transistors | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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