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Investigation of properties of SiO2 defects created during electric stressing at different temperatures

Date

1999
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dc.contributor.authorKaczer, Ben
dc.contributor.authorDegraeve, Robin
dc.contributor.authorPangon, Nadège
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.accessioned2021-10-06T11:28:03Z
dc.date.available2021-10-06T11:28:03Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3545
dc.source.conferenceSemiconductor Interface Specialists' Conference; December 1999; Charleston, SC, USA.
dc.title

Investigation of properties of SiO2 defects created during electric stressing at different temperatures

dc.typeOral presentation
dspace.entity.typePublication
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