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Compressive stress relaxation in Si-doped GaN grown on Si(111) investigated by in situ curvature measurement
Publication:
Compressive stress relaxation in Si-doped GaN grown on Si(111) investigated by in situ curvature measurement
Date
2010
Presentation
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Cheng, Kai
;
Leys, Maarten
;
Dekoster, Johan
;
Degroote, Stefan
Journal
Abstract
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1961
since deposited on 2021-10-18
Acq. date: 2025-10-23
Citations
Metrics
Views
1961
since deposited on 2021-10-18
Acq. date: 2025-10-23
Citations