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Compressive stress relaxation in Si-doped GaN grown on Si(111) investigated by in situ curvature measurement

Date

2010
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dc.contributor.authorCheng, Kai
dc.contributor.authorLeys, Maarten
dc.contributor.authorDekoster, Johan
dc.contributor.authorDegroote, Stefan
dc.contributor.imecauthorDekoster, Johan
dc.date.accessioned2021-10-18T15:33:23Z
dc.date.available2021-10-18T15:33:23Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16854
dc.source.conferenceInternational Workshop on Nitride Semiconductors - IWN
dc.source.conferencedate19/09/2010
dc.source.conferencelocationTampa, FL USA
dc.title

Compressive stress relaxation in Si-doped GaN grown on Si(111) investigated by in situ curvature measurement

dc.typeOral presentation
dspace.entity.typePublication
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