Publication:

Low temperature selective growth of Ga-doped and Ga-B co-doped germanium source/drain for PMOS devices

Date

2023
Journal article
https://doi.org/10.35848/1347-4065/acb1b9
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dc.contributor.authorPorret, Clément
dc.contributor.authorRengo, Gianluca
dc.contributor.authorAyyad, Mustafa
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorRosseel, Erik
dc.contributor.authorLanger, Robert
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorRengo, Gianluca
dc.contributor.imecauthorAyyad, Mustafa
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecRengo, Gianluca::0000-0002-3410-6466
dc.contributor.orcidimecAyyad, Mustafa::0000-0003-2222-8295
dc.contributor.orcidimecRosseel, Erik::0000-0002-2737-8391
dc.date.accessioned2023-07-07T08:03:29Z
dc.date.available2023-02-20T03:21:23Z
dc.date.available2023-07-07T08:03:29Z
dc.date.embargo2023-07-31
dc.date.issued2023
dc.description.wosFundingTextThe authors express their appreciation to local authorities, the imec core program members and the pilot line. Air Liquide Advanced Materials is acknowledged for providing Ge2H6. The TTBGa MO precursor is from Dockweiler Chemicals GmbH. All epitaxial materials were grown in an ASM IntrepidTM CVD reactor. Gianluca Rengo received a PhD grant from the Flemish Research Foundation (FWO). This project received funding from the ECSEL Joint Undertaking (JU) under grant agreement No. 875999. The JU receives support from the European Union's Horizon 2020 research and innovation programme and Netherlands, Belgium, Germany, France, Austria, Hungary, United Kingdom, Romania, and Israel.
dc.identifier.doi10.35848/1347-4065/acb1b9
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41116
dc.publisherIOP Publishing Ltd
dc.source.beginpageArt. SC1043
dc.source.endpagena
dc.source.issueSC
dc.source.journalJAPANESE JOURNAL OF APPLIED PHYSICS
dc.source.numberofpages6
dc.source.volume62
dc.subject.keywordsEPITAXY
dc.subject.keywordsGE
dc.subject.keywordsGA(C2H5)3
dc.subject.keywordsGA(CH3)3
dc.title

Low temperature selective growth of Ga-doped and Ga-B co-doped germanium source/drain for PMOS devices

dc.typeJournal article
dspace.entity.typePublication
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