Publication:

Gate-length dependent radiation damage in 2-MeV electron-irradiated Si1-xGexS/D p-MOSFETs

Date

2012
Journal article
Simple item page Full metadata Statistics
 
dc.contributor.authorNakashima, Toshiyuki
dc.contributor.authorIdemoto, Tatsuya
dc.contributor.authorTsunoda, Isao
dc.contributor.authorTakakura, Kenichiro
dc.contributor.authorYoneoka, Masashi
dc.contributor.authorOhyama, Hidenori
dc.contributor.authorYoshino, Kenji
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorTakakura, Kenichiro
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-20T13:49:07Z
dc.date.available2021-10-20T13:49:07Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.issn0255-5476
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21190
dc.source.beginpage235
dc.source.endpage238
dc.source.journalMaterials Science Forum
dc.source.volume725
dc.title

Gate-length dependent radiation damage in 2-MeV electron-irradiated Si1-xGexS/D p-MOSFETs

dc.typeJournal article
dspace.entity.typePublication
Files

Original bundle

Name:
25073.pdf
Size:
301.08 KB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Articles