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Strong correlation between dielectric reliability and charge trapping in SiO2/Al2O3 gate stacks with TiN electrodes

Date

2002
Proceedings Paper
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dc.contributor.authorKerber, Andreas
dc.contributor.authorCartier, Eduard
dc.contributor.authorDegraeve, Robin
dc.contributor.authorPantisano, Luigi
dc.contributor.authorRoussel, Philippe
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.date.accessioned2021-10-14T22:00:35Z
dc.date.available2021-10-14T22:00:35Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6470
dc.source.beginpage76
dc.source.conferenceSymposium on VLSI Technology: Digest of Technical Papers
dc.source.conferencedate11/06/2002
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage77
dc.title

Strong correlation between dielectric reliability and charge trapping in SiO2/Al2O3 gate stacks with TiN electrodes

dc.typeProceedings paper
dspace.entity.typePublication
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