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Aging mechanisms in strained Si/high-k based pMOS transistors. Implications in CMOS circuits

Date

2011
Proceedings Paper
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dc.contributor.authorMartin-Martinez, J.
dc.contributor.authorAmat, E.
dc.contributor.authorAyala, N.
dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorVerheyen, Peter
dc.contributor.authorRodriguez, R.
dc.contributor.authorNafria, M.
dc.contributor.authorAymerich, X.
dc.contributor.authorSimoen, Eddy
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-19T16:08:08Z
dc.date.available2021-10-19T16:08:08Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19397
dc.source.conference8th Spanish Conference on Electron Devices - CDE
dc.source.conferencedate8/02/2011
dc.source.conferencelocationPalma de Mallorca Spain
dc.title

Aging mechanisms in strained Si/high-k based pMOS transistors. Implications in CMOS circuits

dc.typeProceedings paper
dspace.entity.typePublication
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