Publication:

Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications

Date

2020
Journal article
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dc.contributor.authorBorga, Matteo
dc.contributor.authorDe Santi, Carlo
dc.contributor.authorStoffels, Steve
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorLi, Xiangdong
dc.contributor.authorZhao, Ming
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMeneghesso,, Gaudenzio
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorZanoni, Enrico
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-28T20:27:20Z
dc.date.available2021-10-28T20:27:20Z
dc.date.issued2020
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34808
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8966597
dc.source.beginpage595
dc.source.endpage599
dc.source.issue2
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume67
dc.title

Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications

dc.typeJournal article
dspace.entity.typePublication
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