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Electrical characterization of capacitors with AVD- deposited hafnium silicates as high-k gate dielectric

Date

2005
Journal article
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dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorWeber, U.
dc.contributor.authorConard, Thierry
dc.contributor.authorKaushik, Vidya
dc.contributor.authorHoussa, Michel
dc.contributor.authorHyun, Sangjin
dc.contributor.authorSeitzinger, Bernard
dc.contributor.authorLehnen, Peer
dc.contributor.authorSchuhmacher, M.
dc.contributor.authorLindner, J.
dc.contributor.authorCaymax, Matty
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-16T06:08:36Z
dc.date.available2021-10-16T06:08:36Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11392
dc.source.beginpageF185
dc.source.endpageF189
dc.source.issue11
dc.source.journalJournal of the Electrochemical Society
dc.source.volume152
dc.title

Electrical characterization of capacitors with AVD- deposited hafnium silicates as high-k gate dielectric

dc.typeJournal article
dspace.entity.typePublication
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