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Depth profiling of B through silicide on silicon structures, using secondary ion-mass spectrometry and resonant postionization mass spectrometry

Date

1996
Journal article
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dc.contributor.authorDe Bisschop, Peter
dc.contributor.authorGomez, J.
dc.contributor.authorGeenen, Luc
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorDe Bisschop, Peter
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.accessioned2021-09-29T14:21:10Z
dc.date.available2021-09-29T14:21:10Z
dc.date.embargo9999-12-31
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1147
dc.source.beginpage311
dc.source.endpage323
dc.source.issue1
dc.source.journalJ. Vacuum Science and Technology B
dc.source.volume14
dc.title

Depth profiling of B through silicide on silicon structures, using secondary ion-mass spectrometry and resonant postionization mass spectrometry

dc.typeJournal article
dspace.entity.typePublication
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