Publication:

Strain-related peculiarities of B incorporation in epitaxial Si1-xGex source/drain materials and their impact on electrical properties

Date

2021
Meeting abstract
https://doi.org/10.1149/MA2021-01341096mtgabs
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dc.contributor.authorPorret, Clément
dc.contributor.authorRengo, Gianluca
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorRosseel, Erik
dc.contributor.authorAyyad, Mustafa
dc.contributor.authorMorris, Richard
dc.contributor.authorVantomme, Andre
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorRengo, Gianluca
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorAyyad, Mustafa
dc.contributor.imecauthorMorris, Richard
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecMorris, Richard::0000-0002-0902-7088
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-31T10:27:25Z
dc.date.available2021-10-31T10:27:25Z
dc.date.issued2021
dc.identifier.doi10.1149/MA2021-01341096mtgabs
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37066
dc.identifier.urlhttps://doi.org/10.1149/MA2021-01341096mtgabs
dc.source.beginpage1096
dc.source.conference239th ECS Meeting:H02: High Purity and High Mobility Semiconductors 16
dc.source.conferencedate30/05/2021
dc.source.conferencelocationChicago, IL USA
dc.title

Strain-related peculiarities of B incorporation in epitaxial Si1-xGex source/drain materials and their impact on electrical properties

dc.typeMeeting abstract
dspace.entity.typePublication
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