Publication:

Selective isotropic etching of Group IV semiconductors to enable gate all around device architectures

Date

2018
Meeting abstract
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dc.contributor.authorKal, Subhadeep
dc.contributor.authorPereira, Cheryl
dc.contributor.authorOniki, Yusuke
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorSmith, Jeffrey
dc.contributor.authorMosden, Aelan
dc.contributor.authorKumar, Kaushik
dc.contributor.authorBiolsi, Peter
dc.contributor.authorHurd, Trace Q.
dc.contributor.imecauthorOniki, Yusuke
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.imecauthorKumar, Kaushik
dc.contributor.orcidimecOniki, Yusuke::0000-0002-6619-1327
dc.date.accessioned2021-10-25T20:35:42Z
dc.date.available2021-10-25T20:35:42Z
dc.date.embargo9999-12-31
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30996
dc.source.conferenceSurface Preparation and Cleaning Conference - SPCC
dc.source.conferencedate10/04/2018
dc.source.conferencelocationBoston, MA USA
dc.title

Selective isotropic etching of Group IV semiconductors to enable gate all around device architectures

dc.typeMeeting abstract
dspace.entity.typePublication
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