Publication:

The paradigm shift in understanding the bias temperature instability: from reaction–diffusion to switching oxide traps

Date

2011
Journal article
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dc.contributor.authorGrasser, Tibor
dc.contributor.authorKaczer, Ben
dc.contributor.authorGoes, Wolfgang
dc.contributor.authorReisinger, Hans
dc.contributor.authorAichinger, Thomas
dc.contributor.authorHehenberger, Phillip
dc.contributor.authorWagner, Paul-Jurgen
dc.contributor.authorSchanovsky, Franz
dc.contributor.authorFranco, Jacopo
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorNelhiebel, M
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.date.accessioned2021-10-19T13:56:54Z
dc.date.available2021-10-19T13:56:54Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19000
dc.identifier.urlhttp://dx.doi.org/10.1109/TED.2011.2164543
dc.source.beginpage3652
dc.source.endpage3666
dc.source.issue11
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume58
dc.title

The paradigm shift in understanding the bias temperature instability: from reaction–diffusion to switching oxide traps

dc.typeJournal article
dspace.entity.typePublication
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