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Simulation study: the effect of random dopants and random traps on hot-carrier degration in nFinFETs
Publication:
Simulation study: the effect of random dopants and random traps on hot-carrier degration in nFinFETs
Date
2020
Proceedings Paper
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45569.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Makarov, A.
;
Kaczer, Ben
;
Roussel, Philippe
;
Vaisman Chasin, Adrian
;
Vandemaele, Michiel
;
Hellings, Geert
;
El-Sayed, A.M.
;
Jech, M.
;
Grasser, T.
;
Linten, Dimitri
;
Tyaginov, Stanislav
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Abstract
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1868
since deposited on 2021-10-29
Acq. date: 2025-10-24
Citations
Metrics
Views
1868
since deposited on 2021-10-29
Acq. date: 2025-10-24
Citations