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BJT effect analysis in p- and n-SOI MuGFETs with high-k gate dielectrics and TiN metal gate electrode for a 1T-DRAM application
Publication:
BJT effect analysis in p- and n-SOI MuGFETs with high-k gate dielectrics and TiN metal gate electrode for a 1T-DRAM application
Date
2011
Proceedings Paper
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Galeti, M.
;
Rodrigues, M.
;
Martino, J.A.
;
Collaert, Nadine
;
Simoen, Eddy
;
Aoulaiche, Marc
;
Jurczak, Gosia
;
Claeys, Cor
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1912
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Acq. date: 2025-12-09
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Views
1912
since deposited on 2021-10-19
2
last month
2
last week
Acq. date: 2025-12-09
Citations