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BJT effect analysis in p- and n-SOI MuGFETs with high-k gate dielectrics and TiN metal gate electrode for a 1T-DRAM application

Date

2011
Proceedings Paper
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dc.contributor.authorGaleti, M.
dc.contributor.authorRodrigues, M.
dc.contributor.authorMartino, J.A.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorSimoen, Eddy
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorJurczak, Gosia
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-19T13:39:59Z
dc.date.available2021-10-19T13:39:59Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18940
dc.source.conference37th IEEE International SOI Conference
dc.source.conferencedate3/10/2011
dc.source.conferencelocationTempe, AZ USA
dc.title

BJT effect analysis in p- and n-SOI MuGFETs with high-k gate dielectrics and TiN metal gate electrode for a 1T-DRAM application

dc.typeProceedings paper
dspace.entity.typePublication
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