Publication:

Ni(Pt) silicide with improved thermal stability for application in DRAM periphery and replacement metal gate devices

Date

2014
Journal article
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dc.contributor.authorSchram, Tom
dc.contributor.authorSpessot, Alessio
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorRosseel, Erik
dc.contributor.authorCaillat, Christian
dc.contributor.authorHoriguchi, Naoto
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-22T05:36:58Z
dc.date.available2021-10-22T05:36:58Z
dc.date.embargo9999-12-31
dc.date.issued2014
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24498
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0167931713007004
dc.source.beginpage157
dc.source.endpage162
dc.source.journalMicroelectronic Engineering
dc.source.volume120
dc.title

Ni(Pt) silicide with improved thermal stability for application in DRAM periphery and replacement metal gate devices

dc.typeJournal article
dspace.entity.typePublication
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