Publication:

Investigation of defect states in AlGaN/GaN high electron mobility transistors by small-signal admittance analysis

Date

2024
Journal article
https://doi.org/10.1063/5.0228156
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dc.contributor.authorRai, Narendra
dc.contributor.authorSarkar, Ritam
dc.contributor.authorMahajan, Ashutosh
dc.contributor.authorLaha, Apurba
dc.contributor.authorSaha, Dipankar
dc.contributor.authorGanguly, Swaroop
dc.contributor.imecauthorSarkar, Ritam
dc.contributor.orcidimecSarkar, Ritam::0000-0001-7753-4658
dc.date.accessioned2025-07-31T11:52:31Z
dc.date.available2024-11-02T16:40:35Z
dc.date.available2025-07-31T11:52:31Z
dc.date.embargo2024-10-06
dc.date.issued2024
dc.description.wosFundingTextThis work was supported by Ministry of Electronics and Information Technology (MeitY) and Department of Science and Technology (DST), Government of India, through the Nanoelectronics Network for Research and Applications (NNetRA) as well as through the Science & Engineering Research Board (SERB). N.R. acknowledges support through the Visvesvaraya Ph.D. Scheme from MeitY.
dc.identifier.doi10.1063/5.0228156
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44731
dc.publisherAIP Publishing
dc.source.beginpageArt. 164501
dc.source.endpageN/A
dc.source.issue16
dc.source.journalJOURNAL OF APPLIED PHYSICS
dc.source.numberofpages13
dc.source.volume136
dc.subject.keywordsGATE-LAG
dc.subject.keywordsGAN
dc.subject.keywordsHEMT
dc.subject.keywordsDISLOCATIONS
dc.subject.keywordsBUFFER
dc.subject.keywordsTRAPS
dc.title

Investigation of defect states in AlGaN/GaN high electron mobility transistors by small-signal admittance analysis

dc.typeJournal article
dspace.entity.typePublication
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