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Enhancement of the metal si-doped AlGaAs Schottky barrier height by CH4/H2 reactive ion etching
Publication:
Enhancement of the metal si-doped AlGaAs Schottky barrier height by CH4/H2 reactive ion etching
Date
1996
Journal article
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Pereira, Ricardo
;
Van Hove, Marleen
;
Van Rossum, Marc
Journal
Journal of Solid-State Devices and Circuits
Abstract
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1890
since deposited on 2021-09-29
Acq. date: 2025-10-26
Citations
Metrics
Views
1890
since deposited on 2021-09-29
Acq. date: 2025-10-26
Citations