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Enhancement of the metal si-doped AlGaAs Schottky barrier height by CH4/H2 reactive ion etching

Date

1996
Journal article
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dc.contributor.authorPereira, Ricardo
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorVan Rossum, Marc
dc.date.accessioned2021-09-29T15:16:48Z
dc.date.available2021-09-29T15:16:48Z
dc.date.embargo9999-12-31
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1409
dc.source.beginpage11
dc.source.endpage16
dc.source.issue1
dc.source.journalJournal of Solid-State Devices and Circuits
dc.source.volume4
dc.title

Enhancement of the metal si-doped AlGaAs Schottky barrier height by CH4/H2 reactive ion etching

dc.typeJournal article
dspace.entity.typePublication
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