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Integration of dual work function CMOS using doped high-K dielectric and metal gates to achieve improved power-performance

Date

2008
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dc.contributor.authorBiesemans, Serge
dc.contributor.imecauthorBiesemans, Serge
dc.date.accessioned2021-10-17T06:18:25Z
dc.date.available2021-10-17T06:18:25Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13393
dc.source.conferenceInternational Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology - IWDTF
dc.source.conferencedate5/11/2008
dc.source.conferencelocationTokyo Japan
dc.title

Integration of dual work function CMOS using doped high-K dielectric and metal gates to achieve improved power-performance

dc.typeOral presentation
dspace.entity.typePublication
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