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Characterization of the Total Charge and Time Duration for Single-Event Transient Voltage Pulses in a 65-nm CMOS Technology

 
dc.contributor.authorLi, Zheyi
dc.contributor.authorBerti, Laurent
dc.contributor.authorWouters, Jan
dc.contributor.authorJialei, Wang
dc.contributor.authorLeroux, Paul
dc.contributor.imecauthorLi, Zheyi
dc.contributor.imecauthorBerti, Laurent
dc.contributor.imecauthorWouters, Jan
dc.contributor.orcidimecLi, Zheyi::0000-0002-1740-1711
dc.contributor.orcidimecBerti, Laurent::0000-0002-0388-6498
dc.contributor.orcidimecWouters, Jan::0000-0002-4857-6020
dc.date.accessioned2022-08-31T09:27:29Z
dc.date.available2022-07-31T02:29:15Z
dc.date.available2022-08-03T08:30:04Z
dc.date.available2022-08-31T09:27:29Z
dc.date.embargo9999-12-31
dc.date.issued2022
dc.description.wosFundingTextThis work was supported in part by the European Union's Horizon 2020 Research and Innovation Programme through the framework of RADSAGA under Grant 721624.
dc.identifier.doi10.1109/TNS.2022.3141070
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40185
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage1593
dc.source.endpage1601
dc.source.issue7
dc.source.journalIEEE TRANSACTIONS ON NUCLEAR SCIENCE
dc.source.numberofpages9
dc.source.volume69
dc.subject.disciplineElectrical & electronic engineering
dc.subject.keywordsCMOS
dc.subject.keywordsSEEs
dc.subject.keywordsSET
dc.title

Characterization of the Total Charge and Time Duration for Single-Event Transient Voltage Pulses in a 65-nm CMOS Technology

dc.typeJournal article
dspace.entity.typePublication
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