Extending 0.33NA EUVL to 28 nm pitch using alternative mask and controlled aberrations

dc.contributor.author	Rio, D.
dc.contributor.author	Van Adrichem, P.
dc.contributor.author	Delorme, M.
dc.contributor.author	Lyakhova, K.
dc.contributor.author	Spence, C.
dc.contributor.author	Franke, Joern-Holger
dc.contributor.imecauthor	Franke, Joern-Holger
dc.contributor.orcidimec	Franke, Joern-Holger::0000-0002-3571-1633
dc.date.accessioned	2022-03-11T13:23:35Z
dc.date.available	2022-03-11T13:23:35Z
dc.date.issued	2021
dc.identifier.doi	10.1117/12.2583800
dc.identifier.eisbn	978-1-5106-4052-8
dc.identifier.isbn	978-1-5106-4051-1
dc.identifier.issn	0277-786X
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/39412
dc.publisher	SPIE-INT SOC OPTICAL ENGINEERING
dc.source.beginpage	116090T
dc.source.conference	Conference on Extreme Ultraviolet (EUV) Lithography XII
dc.source.conferencedate	FEB 22-26, 2021
dc.source.conferencelocation	Virtual
dc.source.journal	Proceedings of SPIE
dc.source.numberofpages	16
dc.source.volume	11609
dc.title	Extending 0.33NA EUVL to 28 nm pitch using alternative mask and controlled aberrations
dc.type	Proceedings paper
dspace.entity.type	Publication
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