Activation energies for oxide- and interface-trap charge generation due to negative-bias--temperature stress of Si-capped SiGe-pMOSFETs

Publication:

2015-09

Journal article

Author(s)

Xing, Guo

;

Hatchtel, Jordan

;

;

;

;

;

Pantelides, Sokrates

IEEE Transactions on Device and Materials Reliability

1872 since deposited on 2021-10-23

2last month

Acq. date: 2026-02-25