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Activation energies for oxide- and interface-trap charge generation due to negative-bias--temperature stress of Si-capped SiGe-pMOSFETs
Publication:
Activation energies for oxide- and interface-trap charge generation due to negative-bias--temperature stress of Si-capped SiGe-pMOSFETs
Date
2015-09
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Xing, Guo
;
Hatchtel, Jordan
;
Linten, Dimitri
;
Mitard, Jerome
;
Witters, Liesbeth
;
Collaert, Nadine
;
Pantelides, Sokrates
Journal
IEEE Transactions on Device and Materials Reliability
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1867
since deposited on 2021-10-23
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Acq. date: 2025-10-24
Citations
Metrics
Views
1867
since deposited on 2021-10-23
404
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations