Publication:

Activation energies for oxide- and interface-trap charge generation due to negative-bias--temperature stress of Si-capped SiGe-pMOSFETs

Date

2015-09
Journal article
Simple item page Full metadata Statistics
 
dc.contributor.authorXing, Guo
dc.contributor.authorHatchtel, Jordan
dc.contributor.authorLinten, Dimitri
dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorCollaert, Nadine
dc.contributor.authorPantelides, Sokrates
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-23T01:14:51Z
dc.date.available2021-10-23T01:14:51Z
dc.date.issued2015-09
dc.identifier.issn1530-4388
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26203
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7118163
dc.source.beginpage352
dc.source.endpage357
dc.source.issue3
dc.source.journalIEEE Transactions on Device and Materials Reliability
dc.source.volume15
dc.title

Activation energies for oxide- and interface-trap charge generation due to negative-bias--temperature stress of Si-capped SiGe-pMOSFETs

dc.typeJournal article
dspace.entity.typePublication
Files
Publication available in collections:
Articles