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Analytical model for failure rate prediction due to anomalous charge loss of Flash memories

Date

2001
Proceedings Paper
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dc.contributor.authorDegraeve, Robin
dc.contributor.authorSchuler, Franz
dc.contributor.authorLorenzini, Martino
dc.contributor.authorWellekens, Dirk
dc.contributor.authorHendrickx, Paul
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorHaspeslagh, Luc
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorTempel, Georg
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorHendrickx, Paul
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorHaspeslagh, Luc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-14T16:49:19Z
dc.date.available2021-10-14T16:49:19Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5231
dc.source.beginpage699
dc.source.conferenceIEDM Technical Digest
dc.source.conferencedate2/12/2001
dc.source.conferencelocationWashington, D.C. USA
dc.source.endpage702
dc.title

Analytical model for failure rate prediction due to anomalous charge loss of Flash memories

dc.typeProceedings paper
dspace.entity.typePublication
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