Influence of Si precursor on Ge segregation during ultrathin Si reduced pressure chemical vapor deposition on Ge

dc.contributor.author	Vincent, Benjamin
dc.contributor.author	Vandervorst, Wilfried
dc.contributor.author	Caymax, Matty
dc.contributor.author	Loo, Roger
dc.contributor.imecauthor	Vincent, Benjamin
dc.contributor.imecauthor	Vandervorst, Wilfried
dc.contributor.imecauthor	Caymax, Matty
dc.contributor.imecauthor	Loo, Roger
dc.contributor.orcidimec	Loo, Roger::0000-0003-3513-6058
dc.date.accessioned	2021-10-18T04:57:47Z
dc.date.available	2021-10-18T04:57:47Z
dc.date.issued	2009-12
dc.identifier.issn	0003-6951
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/16499
dc.source.beginpage	262112
dc.source.issue	26
dc.source.journal	Applied Physics Letters
dc.source.volume	95
dc.title	Influence of Si precursor on Ge segregation during ultrathin Si reduced pressure chemical vapor deposition on Ge
dc.type	Journal article
dspace.entity.type	Publication
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