Publication:

Positive and negative bias temperature instability in La2O3 and Al2O3 capped high-k MOSFETs

Date

2009
Proceedings Paper
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dc.contributor.authorAoulaiche, Marc
dc.contributor.authorKaczer, Ben
dc.contributor.authorCho, Moon Ju
dc.contributor.authorHoussa, Michel
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorAkheyar, Amal
dc.contributor.authorSchram, Tom
dc.contributor.authorRoussel, Philippe
dc.contributor.authorMaes, Herman
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorBiesemans, Serge
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.date.accessioned2021-10-17T21:17:58Z
dc.date.available2021-10-17T21:17:58Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14903
dc.source.beginpage1014
dc.source.conference47th Annual IEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate26/04/2009
dc.source.conferencelocationMontreal Canada
dc.source.endpage1018
dc.title

Positive and negative bias temperature instability in La2O3 and Al2O3 capped high-k MOSFETs

dc.typeProceedings paper
dspace.entity.typePublication
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