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Degradation and breakdown of 0.9 nm EOT SiO2/ ALD HfO2/metal gate stacks under positive constant voltage stress
Publication:
Degradation and breakdown of 0.9 nm EOT SiO2/ ALD HfO2/metal gate stacks under positive constant voltage stress
Date
2005-12
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Degraeve, Robin
;
Kauerauf, Thomas
;
Cho, Moon Ju
;
Zahid, Mohammed
;
Ragnarsson, Lars-Ake
;
Brunco, David
;
Kaczer, Ben
;
Roussel, Philippe
;
De Gendt, Stefan
;
Groeseneken, Guido
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1926
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations
Metrics
Views
1926
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations