Publication:

Degradation and breakdown of 0.9 nm EOT SiO2/ ALD HfO2/metal gate stacks under positive constant voltage stress

Date

2005-12
Proceedings Paper
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dc.contributor.authorDegraeve, Robin
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorCho, Moon Ju
dc.contributor.authorZahid, Mohammed
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorBrunco, David
dc.contributor.authorKaczer, Ben
dc.contributor.authorRoussel, Philippe
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-16T01:17:24Z
dc.date.available2021-10-16T01:17:24Z
dc.date.issued2005-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10359
dc.source.beginpage16/06/2001
dc.source.conferenceTechnical Digest International Electronic Devices Meeting (IEDM)
dc.source.conferencedate5/12/2005
dc.source.conferencelocationWashington, D.C. USA
dc.source.endpage16/06/2004
dc.title

Degradation and breakdown of 0.9 nm EOT SiO2/ ALD HfO2/metal gate stacks under positive constant voltage stress

dc.typeProceedings paper
dspace.entity.typePublication
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