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Direct evidence of linewidth effect: Ni31Si12 and Ni3Si formation on 25 nm Ni fully silicided gates

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dc.contributor.authorKittl, Jorge
dc.contributor.authorLauwers, Anne
dc.contributor.authorDemeurisse, Caroline
dc.contributor.authorVrancken, Christa
dc.contributor.authorKubicek, Stefan
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorDemeurisse, Caroline
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.date.accessioned2021-10-16T17:07:48Z
dc.date.available2021-10-16T17:07:48Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12403
dc.source.beginpage172107
dc.source.issue17
dc.source.journalApplied Physics Letters
dc.source.volume90
dc.title

Direct evidence of linewidth effect: Ni31Si12 and Ni3Si formation on 25 nm Ni fully silicided gates

dc.typeJournal article
dspace.entity.typePublication
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