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Two-dimensional profiling in silicon using conventional and electrochemical selective etching

Date

1997
Proceedings Paper
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dc.contributor.authorTrenkler, Thomas
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHellemans, L.
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.accessioned2021-09-30T09:40:45Z
dc.date.available2021-09-30T09:40:45Z
dc.date.embargo9999-12-31
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2186
dc.source.beginpage55.1
dc.source.conference4th International Workshop on the Measurement, Characterization and Modelling of Ultra-Shallow Doping Profiles in Semiconductors
dc.source.conferencedate6/04/1997
dc.source.conferencelocationResearch Triangle Park, NC USA
dc.source.endpage55.9
dc.title

Two-dimensional profiling in silicon using conventional and electrochemical selective etching

dc.typeProceedings paper
dspace.entity.typePublication
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