The impact of the gate oxide thickness reduction on the gate induced floating body effect in SOI nMOSFETs

dc.contributor.author	Ghedini der Agopian, Paula
dc.contributor.author	Martino, J.A.
dc.contributor.author	Simoen, Eddy
dc.contributor.author	Claeys, Cor
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2021-10-16T16:15:09Z
dc.date.available	2021-10-16T16:15:09Z
dc.date.embargo	9999-12-31
dc.date.issued	2007
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/12190
dc.source.beginpage	305
dc.source.conference	Microelectonics Technology and Devices SBMICRO 2007
dc.source.conferencedate	3/09/2007
dc.source.conferencelocation	Rio de Janeiro Brazil
dc.source.endpage	311
dc.title	The impact of the gate oxide thickness reduction on the gate induced floating body effect in SOI nMOSFETs
dc.type	Proceedings paper
dspace.entity.type	Publication
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