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Reliability of strained-Si devices with post-oxide-deposition strain introduction

Date

2008
Journal article
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dc.contributor.authorShickova, Adelina
dc.contributor.authorVerheyen, Peter
dc.contributor.authorEneman, Geert
dc.contributor.authorDegraeve, Robin
dc.contributor.authorSimoen, Eddy
dc.contributor.authorFavia, Paola
dc.contributor.authorKlenov, Dmitri
dc.contributor.authorSan Andres, Enrico
dc.contributor.authorKaczer, Ben
dc.contributor.authorJurczak, Gosia
dc.contributor.authorAbsil, Philippe
dc.contributor.authorMaes, Herman
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.accessioned2021-10-17T10:43:00Z
dc.date.available2021-10-17T10:43:00Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14465
dc.source.beginpage3432
dc.source.endpage3441
dc.source.issue12
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume55
dc.title

Reliability of strained-Si devices with post-oxide-deposition strain introduction

dc.typeJournal article
dspace.entity.typePublication
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