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A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs

Date

2016
Journal article
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dc.contributor.authorMa, Jigang
dc.contributor.authorZhang, Wei Dong
dc.contributor.authorZhang, Jian Fu
dc.contributor.authorBenbakhti, Brahim
dc.contributor.authorLi, Zhigang
dc.contributor.authorMitard, Jerome
dc.contributor.authorArimura, Hiroaki
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.date.accessioned2021-10-23T12:22:38Z
dc.date.available2021-10-23T12:22:38Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26935
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7563816/
dc.source.beginpage3830
dc.source.endpage3836
dc.source.issue10
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume63
dc.title

A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs

dc.typeJournal article
dspace.entity.typePublication
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