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Impact of laser anneal thermal budget on the quality of thin SiGe channels with a high Ge content

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dc.contributor.authorRosseel, Erik
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMitard, Jerome
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorPap, A.
dc.contributor.authorPavelka,
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.date.accessioned2021-10-18T21:00:36Z
dc.date.available2021-10-18T21:00:36Z
dc.date.embargo9999-12-31
dc.date.issued2010-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17908
dc.source.beginpage62
dc.source.conference18th IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP
dc.source.conferencedate29/09/2010
dc.source.conferencelocationGainesville, FL USA
dc.source.endpage65
dc.title

Impact of laser anneal thermal budget on the quality of thin SiGe channels with a high Ge content

dc.typeProceedings paper
dspace.entity.typePublication
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