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Plasma influence on the attenuation of line width roughness of EUV photoresist lines ranging from 40 to 22 nm half pitch

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dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.authorDe Schepper, Peter
dc.contributor.authorHansen, Terje
dc.contributor.authorBoullart, Werner
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.imecauthorDe Schepper, Peter
dc.contributor.imecauthorBoullart, Werner
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.date.accessioned2021-10-21T06:42:21Z
dc.date.available2021-10-21T06:42:21Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21966
dc.source.conferenceSPIE Advanced Lithography Conference
dc.source.conferencedate24/02/2013
dc.source.conferencelocationSan Jose, CA USA
dc.title

Plasma influence on the attenuation of line width roughness of EUV photoresist lines ranging from 40 to 22 nm half pitch

dc.typeOral presentation
dspace.entity.typePublication
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