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Physical analysis of beakdown in High-k /metal gate stacks using TEM/EELS and STM for relibaility enhancement

Date

2011
Journal article
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dc.contributor.authorPey, Kin Leong
dc.contributor.authorRaghavan, Nagarajan
dc.contributor.authorWu, Xing
dc.contributor.authorLiu, Wenhu
dc.contributor.authorLi, Xiang
dc.contributor.authorBosman, Michel
dc.contributor.authorShubhakar, Kalya
dc.contributor.authorLwin, Zin Zar
dc.contributor.authorChen, Yining
dc.contributor.authorQin, Hailang
dc.contributor.authorKauerauf, Thomas
dc.date.accessioned2021-10-19T17:17:12Z
dc.date.available2021-10-19T17:17:12Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19567
dc.source.beginpage1365
dc.source.endpage1372
dc.source.issue7
dc.source.journalMicroelectronic Engineering
dc.source.volume88
dc.title

Physical analysis of beakdown in High-k /metal gate stacks using TEM/EELS and STM for relibaility enhancement

dc.typeJournal article
dspace.entity.typePublication
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