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Analysis of the induced stresses in silicon during thermocompression Cu-Cu bonding of Cu-through-vias in 3D-SIC architecture

Date

2007-05
Proceedings Paper
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dc.contributor.authorOkoro, Chukwudi
dc.contributor.authorEneman, Geert
dc.contributor.authorGonzalez, Mario
dc.contributor.authorVandevelde, Bart
dc.contributor.authorSwinnen, Bart
dc.contributor.authorStoukatch, Serguei
dc.contributor.authorBeyne, Eric
dc.contributor.authorVandepitte, Dirk
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorGonzalez, Mario
dc.contributor.imecauthorVandevelde, Bart
dc.contributor.imecauthorSwinnen, Bart
dc.contributor.imecauthorBeyne, Eric
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecVandevelde, Bart::0000-0002-6753-6438
dc.contributor.orcidimecBeyne, Eric::0000-0002-3096-050X
dc.date.accessioned2021-10-16T18:16:30Z
dc.date.available2021-10-16T18:16:30Z
dc.date.issued2007-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12637
dc.source.beginpage249
dc.source.conferenceProceedings 57th Electronic Components and Technology Conference - ECTC
dc.source.conferencedate29/05/2007
dc.source.conferencelocationNew Jersey USA
dc.source.endpage255
dc.title

Analysis of the induced stresses in silicon during thermocompression Cu-Cu bonding of Cu-through-vias in 3D-SIC architecture

dc.typeProceedings paper
dspace.entity.typePublication
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