Publication:

Epitaxial growth schemes for fin and Gate All Around devices

Date

2018
Meeting abstract
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dc.contributor.authorLoo, Roger
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorRosseel, Erik
dc.contributor.authorPorret, Clément
dc.contributor.authorVohra, Anurag
dc.contributor.authorKohen, David
dc.contributor.authorMargetis, Joe
dc.contributor.authorTolle, John
dc.contributor.authorLanger, Robert
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorLanger, Robert
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.date.accessioned2021-10-25T22:28:05Z
dc.date.available2021-10-25T22:28:05Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31230
dc.source.conference11th International WorkShop on New Group IV Semiconductor Nanoelectronics
dc.source.conferencedate23/02/2018
dc.source.conferencelocationSendai Japan
dc.title

Epitaxial growth schemes for fin and Gate All Around devices

dc.typeMeeting abstract
dspace.entity.typePublication
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