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In-situ characterization of the oxidation degree of the sputter surface and the oxygen enhancement of the ionization probability of Si
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In-situ characterization of the oxidation degree of the sputter surface and the oxygen enhancement of the ionization probability of Si
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Date
2000
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Janssens, Tom
;
Vandervorst, Wilfried
Journal
Abstract
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1932
since deposited on 2021-10-14
1
last month
Acq. date: 2025-12-16
Citations
Metrics
Views
1932
since deposited on 2021-10-14
1
last month
Acq. date: 2025-12-16
Citations